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| CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistors Spec. No. : C227S6R Issued Date : 2003.08.29 Revised Date : Page No. : 1/4 (dual transistors) HBN2222S6R Features * Two BTN2222A chips in a SOT-363R package. * Mounting possible with SOT-323 automatic mounting machines. * Transistor elements are independent, eliminating interference. * Mounting cost and area can be cut in half. Equivalent Circuit HBN2222S6R Outline SOT-363R Tr1 Tr2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : *1 200mW per element must not be exceeded Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 75 40 6 600 300(total) 150 -55~+150 Unit V V V mA mW C C *1 HBN2222S6R CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO ICEX IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) 1 *VBE(sat) 2 *hFE 1 *hFE 2 *hFE 3 *hFE 4 *hFE 5 *hFE 6 fT Cob Min. 75 40 6 35 50 75 100 50 40 300 Typ. Max. 10 10 100 0.3 1.0 1.2 2.0 300 8 Unit V V V nA nA nA V V V V MHz pF Spec. No. : C227S6R Issued Date : 2003.08.29 Revised Date : Page No. : 2/4 Test Conditions IC=10A IC=10mA IE=10A VCB=60V VCB=60V, VEB(off) = 3V VEB=3V IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=100A VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=1V, IC=150mA VCE=10V, IC=500mA VCE=20V, IC=20mA, f=100MHz VCB=10V, f=1MHz *Pulse Test: Pulse Width 380s, Duty Cycle2% HBN2222S6R CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 VCE=10V Spec. No. : C227S6R Issued Date : 2003.08.29 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector Current 1000 Saturation Voltage---(mV) VCE(SAT)@IC=10IB Current Gain---HFE 100 VCE=1V 100 10 0.1 1 10 100 1000 Collector Current---IC(mA) 10 0.1 1 10 100 Collector Current---IC(mA) 1000 Saturation Voltage vs Collector Current 10000 Cutoff Frequency---fT(MHz) Saturation Voltage---(mV) VBE(SAT)@IC=10IB Cutoff Frequency vs Collector Current 1000 VCE=20V 1000 100 0.1 1 10 100 1000 Collector Current---IC(mA) 100 1 10 Collector Current---IC(mA) 100 Power Derating Curves 350 Power Dissipation---PD(mW) 300 250 Single Dual 200 150 100 50 0 0 50 100 150 200 Ambient Temperature---TA() HBN2222S6R CYStek Product Specification CYStech Electronics Corp. SOT-363R Dimension Spec. No. : C227S6R Issued Date : 2003.08.29 Revised Date : Page No. : 4/4 Style: Pin 1. Emitter1 (E1) Pin 2. Base1 (B1) Pin 3. Collector2 (C2) Pin 4. Emitter2 (E2) Pin 5. Base2 (B2) Pin 6. Collector1 (C1) Marking: 1PR 6-Lead SOT-363R Plastic Surface Mounted Package CYStek Package Code: S6R *:Typical DIM A B C D G H Inches Min. Max. 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026BSC 0.004 Millimeters Min. Max. 1.8 2.2 1.15 1.35 0.8 1.1 0.1 0.3 0.65BSC 0.1 DIM J K N S Y Inches Min. Max. 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 Millimeters Min. Max. 0.1 0.25 0.1 0.30 0.20 REF 2.00 2.40 0.30 0.40 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : * Lead : 42 Alloy ; solder plating * Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. HBN2222S6R CYStek Product Specification |
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